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IRF7241PbF - Power MOSFET

IRF7241PbF Description

* Trench Technology * Ultra Low On-Resistance * P-Channel MOSFET * Available in Tape & Reel * Lead-Free VDSS -40V PD - 95294 IRF.
S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resi.

IRF7241PbF Applications

* SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation
* Power Dissipation
* Linear Derating Factor

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Power MOSFET International Rectifier
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