Datasheet Details
- Part number
- RIC7S113L4
- Manufacturer
- International Rectifier
- File Size
- 216.88 KB
- Datasheet
- RIC7S113L4-InternationalRectifier.pdf
- Description
- RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7S113L4 Description
PD-97828 RIC7S113L4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER .RIC7S113L4 Features
* Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOFFSET IO+/VOUT ton/RIC7S113L4 Applications
* The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts. Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM.
📁 Related Datasheet
📌 All Tags