2N6976 Datasheet (Intersil Corporation)

2N6976, N-Channel IGBTs

The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.

These types can be operated directly from low-power integrated circuits.

E P

2N6976 Features

* 5A, 400V and 500V

* VCE(ON) 2V

* TFI 1µs, 0.5µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance GATE Applications

* Power Supplies

* Motor Drives

* Protection Circuits Terminal Diagram N-CHANNEL ENHANC