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CTS20MS

Radiation Hardened Dual 4-Input NAND Gate

CTS20MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)

* Dose Rate Survivability: >1 x 1012 RAD (Si)/s

* Dose Rate Upset >1010

CTS20MS General Description

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS20.

CTS20MS Datasheet (132.27 KB)

Preview of CTS20MS PDF

Datasheet Details

Part number:

CTS20MS

Manufacturer:

Intersil Corporation

File Size:

132.27 KB

Description:

Radiation hardened dual 4-input nand gate.
HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-.

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TAGS

CTS20MS Radiation Hardened Dual 4-Input NAND Gate Intersil Corporation

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