CTS05S30 Datasheet - Toshiba

CTS05S30 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CTS05S30 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 0.5 A Non-repetitive peak forward surge current IFSM (Note 2) 2 Junction temperature Tj 125  Storage tempe.

CTS05S30-Toshiba.pdf