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CTS05S30 Datasheet - Toshiba

CTS05S30 - Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CTS05S30 1.

Applications High-Speed Switching 2.

Packaging and Internal Circuit CTS05S30 1: Cathode 2: Anode CST2 3.

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 0.5 A Non-repetitive peak forward surge current IFSM (Note 2) 2 Junction temperature Tj 125  Storage tempe

CTS05S30-Toshiba.pdf

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Datasheet Details

Part number:

CTS05S30

Manufacturer:

Toshiba ↗

File Size:

151.37 KB

Description:

Schottky barrier diode.

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