Datasheet4U Logo Datasheet4U.com

FSF055D Datasheet - Intersil Corporation

FSF055D N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

FSF055D Features

* 25A, 60V, rDS(ON) = 0.020Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat

FSF055D_IntersilCorporation.pdf

Preview of FSF055D PDF
FSF055D Datasheet Preview Page 2 FSF055D Datasheet Preview Page 3

Datasheet Details

Part number:

FSF055D

Manufacturer:

Intersil Corporation

File Size:

46.65 KB

Description:

N-channel power mosfets.

📁 Related Datasheet

FSF055R N-Channel Power MOSFETs (Intersil Corporation)

FSF055R4 N-Channel Power MOSFETs (Intersil Corporation)

FSF05A20 FRD (Nihon Inter Electronics)

FSF05A20 Fast Recovery Diode (Kyocera)

FSF05A20B FRED (Nihon Inter Electronics)

FSF05A40 FRED (Nihon Inter)

FSF05A40B FRED (Nihon Inter Electronics)

FSF05A60 FRD (ETC)

TAGS

FSF055D FSF055D N-Channel Power MOSFETs Intersil Corporation

FSF055D Distributor