FSF250D - N-Channel Power MOSFETs

Intersil Corporation

FSF250D Datasheet Preview — Preview of FSF250D PDF

Datasheet Details

Part number	FSF250D
Manufacturer	Intersil Corporation
File Size	45.25 KB
Description	N-Channel Power MOSFETs
Datasheet	FSF250D_IntersilCorporation.pdf

FSF250D Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

24A, 200V, rDS(ON) = 0.110Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 12nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

📁 FSF250D Similar Datasheet

FSF2100 - Fairchild Power Switch (Fairchild Semiconductor)
FSF03B60 - FRED (Nihon Inter Electronics)
FSF03D60 - FRED (Nihon Inter Electronics)
FSF03UB60 - FRED (Nihon Inter Electronics)
FSF05A20 - FRD (Nihon Inter Electronics)
FSF05A20B - FRED (Nihon Inter Electronics)
FSF05A40 - FRED (Nihon Inter)
FSF05A40B - FRED (Nihon Inter Electronics)

Other Datasheets by Intersil Corporation

FSF250R - N-Channel Power MOSFETs
FSF254D - N-Channel Power MOSFETs
FSF254R - N-Channel Power MOSFETs
FSF055D - N-Channel Power MOSFETs
FSF055R - N-Channel Power MOSFETs
FSF055R4 - N-Channel Power MOSFETs

Published: Mar 23, 2005 |