FSPYC260F Datasheet - Intersil Corporation

FSPYC260F N-Channel Power MOSFET

FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star Power Rad Hard MOSFETs have been speciﬁcally developed for high performance applications in a commercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power FETs combine this electrical capability with total dose r.

FSPYC260F Features

* 58A, 200V, rDS(ON) = 0.031Ω

* UIS Rated

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Break

FSPYC260F Datasheet (83.68 KB)

FSPYC260F Datasheet Preview — Preview of FSPYC260F PDF

Datasheet Details

Part number:

FSPYC260F

Manufacturer:

Intersil Corporation

File Size:

83.68 KB

Description:

N-channel power mosfet.

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FSPYC260F N-Channel Power MOSFET Intersil Corporation

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