FSPYC260F N-Channel Power MOSFET

Intersil Corporation

Description

FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star *Power.

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Datasheet Specifications

Part number: FSPYC260F
Manufacturer: Intersil Corporation
File Size: 83.68 KB
Datasheet: FSPYC260F_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 58A, 200V, rDS(ON) = 0.031Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Break

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS

FSPYC260F Distributors

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FSPYC260F N-Channel Power MOSFET Intersil Corporation

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