* 58A, 200V, rDS(ON) = 0.031Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Break
FSPYC260F4 Datasheet (83.68 KB)
FSPYC260F4
Intersil Corporation
83.68 KB
N-channel power mosfet.
FSPYC260R, FSPYC260F
TM
Data Sheet
May 2000
File Number
4850.1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Intersil Star
*Power.
📁 Related Datasheet
FSPYC260F N-Channel Power MOSFET (Intersil Corporation)
FSPYC260F3 N-Channel Power MOSFET (Intersil Corporation)
FSPYC260D1 N-Channel Power MOSFET (Intersil Corporation)
FSPYC260R N-Channel Power MOSFET (Intersil Corporation)
FSPYC260R4 N-Channel Power MOSFET (Intersil Corporation)
FSPYE230 N-Channel Power MOSFET (Intersil Corporation)
FSPYE230D1 N-Channel Power MOSFET (Intersil Corporation)
FSPYE230F N-Channel Power MOSFET (Intersil Corporation)
FSPYE230F3 N-Channel Power MOSFET (Intersil Corporation)
FSPYE230F4 N-Channel Power MOSFET (Intersil Corporation)
