FSPYE230D1 N-Channel Power MOSFET

Intersil Corporation

Description

FSPYE230R, FSPYE230F TM Data Sheet May 2000 File Number 4852.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star *Power.

📥 Download Datasheet

FSPYE230D1 Datasheet Preview — Preview of FSPYE230D1 PDF

Datasheet Specifications

Part number: FSPYE230D1
Manufacturer: Intersil Corporation
File Size: 83.75 KB
Datasheet: FSPYE230D1_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 12A, 200V, rDS(ON) = 0.140Ω
* UIS Rated
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) - Rated to 300K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Break

Applications

* in a commercial or military space environment. Star
* Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star
* Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs

FSPYE230D1 Distributors

📁 Related Datasheet

FSP065-AAB FSP084-DMAA1 FSP084-DMBA1 FSP090-1ADC21 FSP1084 FSP1117

📌 All Tags

FSPYE230D1 N-Channel Power MOSFET Intersil Corporation

Intersil Corporation FSPYE230D1-like datasheet