* 9A, 200V, rDS(ON) = 0.330Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat
FSS23A0R
Intersil Corporation
56.72 KB
9a/ 200v/ 0.330 ohm/ radiation hardened/ segr resistant n-channel power mosfets.
FSS23A0D, FSS23A0R
Data Sheet June 1999 File Number
4485.2
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discre.
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9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSS232 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6359
Features
· Low ON resistance. · 4V drive.
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FSS234 - N-Channel Silicon MOSFET
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