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FSS23A4D

7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

FSS23A4D Features

* 7A, 250V, rDS(ON) = 0.460Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat

FSS23A4D General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined.

FSS23A4D Datasheet (46.89 KB)

Preview of FSS23A4D PDF

Datasheet Details

Part number:

FSS23A4D

Manufacturer:

Intersil Corporation

File Size:

46.89 KB

Description:

7a/ 250v/ 0.460 ohm/ rad hard/ segr resistant/ n-channel power mosfets.

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FSS23A4D 250V 0.460 Ohm Rad Hard SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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