FSYA250D Datasheet - Intersil Corporation

FSYA250D, 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

FSYA250D, FSYA250R June 1998 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

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Datasheet Details

Part number:

FSYA250D

Manufacturer:

Intersil Corporation

File Size:

46.23 KB

Description:

27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Features

* 27A, 200V, rDS(ON) = 0.100Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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FSYA250D 27A 200V 0.100 Ohm Rad Hard SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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