FSYA254D - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Intersil Corporation

Datasheet Details

Part number	FSYA254D
Manufacturer	Intersil Corporation
File Size	55.83 KB
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet	FSYA254D_IntersilCorporation.pdf

21A, 250V, rDS(ON) = 0.150Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 15nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

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Published: Mar 23, 2005 |