FSYC260D - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Intersil Corporation

FSYC260D Datasheet Preview — Preview of FSYC260D PDF

Datasheet Details

Part number	FSYC260D
Manufacturer	Intersil Corporation
File Size	48.84 KB
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet	FSYC260D_IntersilCorporation.pdf

FSYC260D Product details

Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Features

46A, 200V, rDS(ON) = 0.050Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 17nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

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Published: Mar 23, 2005 |