Part number:
FSYC055D
Manufacturer:
Intersil Corporation
File Size:
49.30 KB
Description:
Radiation hardened/ segr resistant n-channel power mosfets.
* 70A (Note), 60V, rDS(ON) = 0.012Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* D
FSYC055D
Intersil Corporation
49.30 KB
Radiation hardened/ segr resistant n-channel power mosfets.
📁 Related Datasheet
FSYC055R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC160D Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
FSYC160R Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs (Intersil Corporation)
FSYC163D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC163R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC260D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC260R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC264D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC264R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYC360D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)