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FSYC055D Datasheet - Intersil Corporation

FSYC055D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RA.

FSYC055D Features

* 70A (Note), 60V, rDS(ON) = 0.012Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* D

FSYC055D_IntersilCorporation.pdf

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Datasheet Details

Part number:

FSYC055D

Manufacturer:

Intersil Corporation

File Size:

49.30 KB

Description:

Radiation hardened/ segr resistant n-channel power mosfets.

FSYC055D Distributor

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Stock and price

Distributor
SMC Diode Solutions
RL205G
0 In Stock
Unit Price : $0

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FSYC055D FSYC055D Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation