FSYC163D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Intersil Corporation

Description

FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of.

📥 Download Datasheet

FSYC163D Datasheet Preview — Preview of FSYC163D PDF

Datasheet Specifications

Part number: FSYC163D
Manufacturer: Intersil Corporation
File Size: 61.58 KB
Datasheet: FSYC163D_IntersilCorporation.pdf
Description: Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Features

* 62A, 130V, rDS(ON) = 0.030Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

FSYC163D Distributors

📁 Related Datasheet

FSYA450R

📌 All Tags

FSYC163D Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

Intersil Corporation FSYC163D-like datasheet