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FSYC163R

Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYC163R Features

* 62A, 130V, rDS(ON) = 0.030Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSYC163R Datasheet (61.58 KB)

Preview of FSYC163R PDF

Datasheet Details

Part number:

FSYC163R

Manufacturer:

Intersil Corporation

File Size:

61.58 KB

Description:

Radiation hardened/ segr resistant n-channel power mosfets.
FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of.

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FSYC163R Radiation Hardened SEGR Resistant N-Channel Power MOSFETs Intersil Corporation

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