FSYE913A0D Datasheet - Intersil Corporation

FSYE913A0D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYE923A0D, FSYE923A0R TM Data Sheet June 2000 File Number 4773.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADs of total dose hardness to provide devices which are ide.

FSYE913A0D Features

* 6A, -200V, rDS(ON) = 0.650Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSYE913A0D Datasheet (70.29 KB)

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Datasheet Details

Part number:

FSYE913A0D

Manufacturer:

Intersil Corporation

File Size:

70.29 KB

Description:

Radiation hardened/ segr resistant p-channel power mosfets.

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