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FSYE913A0D

Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSYE913A0D Features

* 6A, -200V, rDS(ON) = 0.650Ω

* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra

FSYE913A0D Datasheet (70.29 KB)

Preview of FSYE913A0D PDF

Datasheet Details

Part number:

FSYE913A0D

Manufacturer:

Intersil Corporation

File Size:

70.29 KB

Description:

Radiation hardened/ segr resistant p-channel power mosfets.
FSYE923A0D, FSYE923A0R TM Data Sheet June 2000 File Number 4773.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Product.

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FSYE913A0D Radiation Hardened SEGR Resistant P-Channel Power MOSFETs Intersil Corporation

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