* 12A, 100V, rDS(ON) = 0.160Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Ra
FSYE13A0D Datasheet (55.69 KB)
FSYE13A0D
Intersil Corporation
55.69 KB
Radiation hardened/ segr resistant n-channel power mosfets.
FSYE13A0D, FSYE13A0R
Data Sheet May 1999 File Number
4741
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation .
📁 Related Datasheet
FSYE13A0R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYE23A0D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYE23A0R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYE430D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYE430R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
FSYE913A0D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs (Intersil Corporation)
FSYE913A0R Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs (Intersil Corporation)
FSYE923A0D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs (Intersil Corporation)
FSYE923A0R Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs (Intersil Corporation)
FSYA150D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs (Intersil Corporation)
