* 3A, 500V, rDS(ON) = 2.70Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rate
FSYE430D
Intersil Corporation
58.21 KB
Radiation hardened/ segr resistant n-channel power mosfets.
FSYE430D, FSYE430R
Data Sheet June 1999 File Number
4750
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation o.
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