FSYE430D Datasheet (Intersil Corporation) - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE430D, Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE430D, FSYE430R Data Sheet June 1999 File Number 4750 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh spac

FSYE430D Features

* 3A, 500V, rDS(ON) = 2.70Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rate