FSYE430R Datasheet (Intersil Corporation) - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE430R, Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYE913A0D, FSYE913A0R Data Sheet February 2000 File Number 4744 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally

FSYE430R Features

* 9A, -100V, rDS(ON) = 0.280Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Ra