* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)
* Dose Rate Survivability: >1 x
* Dose Rate Upset >10 10 1012 RAD (S
HCTS30MS Datasheet (323.20 KB)
HCTS30MS
Intersil Corporation
323.20 KB
Radiation hardened 8-input nand gate.
HCTS30MS August 1995 Radiation Hardened 8-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP .
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