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HCTS20MS - Radiation Hardened Dual 4-Input NAND Gate

HCTS20MS Description

TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate .
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

HCTS20MS Features

* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010

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Datasheet Details

Part number
HCTS20MS
Manufacturer
Intersil
File Size
316.67 KB
Datasheet
HCTS20MS-Intersil.pdf
Description
Radiation Hardened Dual 4-Input NAND Gate

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Radiation Hardened Dual 4-Input NAND Gate Intersil
Intersil HCTS20MS-like datasheet

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