HCTS20MS Datasheet (Intersil) - Radiation Hardened Dual 4-Input NAND Gate

HCTS20MS, Radiation Hardened Dual 4-Input NAND Gate

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

A low on any input forces the output to a High state.

The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS20

HCTS20MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)

* Dose Rate Survivability: >1 x 1012 RAD (Si)/s

* Dose Rate Upset >1010