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HCTS20MS

Radiation Hardened Dual 4-Input NAND Gate

HCTS20MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)

* Dose Rate Survivability: >1 x 1012 RAD (Si)/s

* Dose Rate Upset >1010

HCTS20MS General Description

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS20.

HCTS20MS Datasheet (316.67 KB)

Preview of HCTS20MS PDF

Datasheet Details

Part number:

HCTS20MS

Manufacturer:

Intersil

File Size:

316.67 KB

Description:

Radiation hardened dual 4-input nand gate.

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HCTS20MS Radiation Hardened Dual 4-Input NAND Gate Intersil

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