HCTS20MS Radiation Hardened Dual 4-Input NAND Gate

Intersil

Description

TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate .
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

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Datasheet Specifications

Part number: HCTS20MS
Manufacturer: Intersil
File Size: 316.67 KB
Datasheet: HCTS20MS-Intersil.pdf
Description: Radiation Hardened Dual 4-Input NAND Gate

Features

* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010

HCTS20MS Distributors

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Radiation Hardened Dual 4-Input NAND Gate Intersil

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