Datasheet Details
- Part number
- HCTS20MS
- Manufacturer
- Intersil
- File Size
- 316.67 KB
- Datasheet
- HCTS20MS-Intersil.pdf
- Description
- Radiation Hardened Dual 4-Input NAND Gate
HCTS20MS Description
TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate .
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.
HCTS20MS Features
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010
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