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HCTS00MS - Radiation Hardened Quad 2-Input NAND Gate

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Intersil Corporation

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HCTS00MS Radiation Hardened Quad 2-Input NAND Gate by Intersil Corporation - Datasheet Preview — Datasheet preview – HCTS00MS

Datasheet Details

Part number	HCTS00MS
Manufacturer	Intersil Corporation
File Size	579.70 KB
Description	Radiation Hardened Quad 2-Input NAND Gate
Datasheet	HCTS00MS Datasheet
Additional preview pages of the HCTS00MS datasheet.

Product details

Description

The Intersil HCTS00MS is a Radiation Hardened Quad 2-Input NAND Gate.

Features

3 Micron Radiation Hardened SOS CMOS.
Total Dose 200K RAD (Si).
SEP Effective LET No Upsets: >100 MEV-cm2/mg.
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ).
Latch-Up Free Under Any Conditions.
Military Temperature Range: -55oC to +125oC.

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Published: Mar 23, 2005 |