HGT1S20N60C3S Datasheet, igbt equivalent, Intersil Corporation

HGT1S20N60C3S Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGT1S20N60C3S

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Intersil Corporation

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📄 Datasheet

Description:

N-channel igbt.

HGT1S20N60C3S Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT1S20N60C3S

Intersil Corporation

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