Part number:
HM1-6514B-9
Manufacturer:
Intersil Corporation
File Size:
41.05 KB
Description:
1024 x 4 cmos ram.
* Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
* Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
* Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
* TTL Compatible Input/Output
* Common Data Input/Output
HM1-6514B-9 Datasheet (41.05 KB)
HM1-6514B-9
Intersil Corporation
41.05 KB
1024 x 4 cmos ram.
📁 Related Datasheet
HM1-6514-9 - 1024 x 4 CMOS RAM
(Intersil Corporation)
HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.
HM1-6514S-9 - 1024 x 4 CMOS RAM
(Intersil Corporation)
HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.
HM1-6516-9 - 2K x 8 CMOS RAM
(Intersil Corporation)
HM-6516
March 1997
2K x 8 CMOS RAM
Description
The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved .
HM1-65161 - 2K X 8 General Purpose CMOS SRAM
(MHS)
..
..
..
..
..
..
..
.
HM1-65162-9 - 2K x 8 Asynchronous CMOS Static RAM
(Intersil Corporation)
HM-65162
March 1997
2K x 8 Asynchronous CMOS Static RAM
Description
The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using th.
HM1-65162B-9 - 2K x 8 Asynchronous CMOS Static RAM
(Intersil Corporation)
HM-65162
March 1997
2K x 8 Asynchronous CMOS Static RAM
Description
The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using th.
HM1-65162C-9 - 2K x 8 Asynchronous CMOS Static RAM
(Intersil Corporation)
HM-65162
March 1997
2K x 8 Asynchronous CMOS Static RAM
Description
The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using th.
HM1-6516B-9 - 2K x 8 CMOS RAM
(Intersil Corporation)
HM-6516
March 1997
2K x 8 CMOS RAM
Description
The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved .