HP4936DY Datasheet - Intersil Corporation

HP4936DY N-Channel Power MOSFET

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HP4936DY Data Sheet August 1999 File Number 4469.3 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications wher.

HP4936DY Features

* Logic Level Gate Drive

* 5.8A, 30V

* rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V

* rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D1(8) D1(7) Ordering Information

HP4936DY Datasheet (84.31 KB)