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HS1-303RH-Q - Radiation Hardened CMOS Dual SPDT Analog Switch

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si).
  • No Latch-Up, Dielectrically Isolated Device Islands.
  • Pin for Pin Compatible with Intersil HI-303 Series Analog Switches.
  • Analog Signal Range 15V.
  • Low Leakage.
  • . 100nA (Max, Post Rad).
  • Low rON.
  • . . 60Ω (Max, Post Rad).
  • Low Operating Power.
  • 100µA (Max, Post Rad) Pinouts.

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Datasheet Details

Part number HS1-303RH-Q
Manufacturer Intersil Corporation
File Size 491.94 KB
Description Radiation Hardened CMOS Dual SPDT Analog Switch
Datasheet download datasheet HS1-303RH-Q Datasheet
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Full PDF Text Transcription

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HS-303RH TM Data Sheet November 2001 File Number 9046 Radiation Hardened CMOS Dual SPDT Analog Switch The HS-303RH analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). This switch offers lowresistance switching performance for analog voltages up to the supply rails. “ON” resistance is low and stays reasonably constant over the full range of operating voltage and current. “ON” resistance also stays reasonably constant when exposed to radiation, being typically 30Ω pre-rad and 35Ω post 100kRAD(Si).
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