HUF75307T3ST Datasheet - Intersil Corporation

HUF75307T3ST N-Channel MOSFET

Data Sheet HUF75307T3ST October 1999 File Number 4364.4 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in.

HUF75307T3ST Features

* 2.6A, 55V

* Ultra Low On-Resistance, rDS(ON) = 0.090Ω

* Diode Exhibits Both High S

HUF75307T3ST_IntersilCorporation.pdf