HUF75329D3S Datasheet - Intersil Corporation

HUF75329D3S N-Channel MOSFET

HUF75329D3, HUF75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed .

HUF75329D3S Features

* 20A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Li

HUF75329D3S_IntersilCorporation.pdf