Datasheet Details
Part number:
HUF75309D3S
Manufacturer:
Intersil Corporation
File Size:
218.88 KB
Description:
N-Channel MOSFET
Features
* 19A, 55V
* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* Related Literature - TB334, “G
HUF75309D3S_IntersilCorporation.pdf
HUF75309D3S, N-Channel MOSFET
HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for
HUF75309D3S Distributor
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