HUF75309P3 Overview
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor...
HUF75309P3 Key Features
- 19A, 55V
- Simulation Models
- Temperature pensated PSPICE® and SABER© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: .semi.Intersil./families/models.htm
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
