HUF75309T3ST Description
HUF75309T3ST Data Sheet June 1999 File Number 4377.3 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits...
HUF75309T3ST Key Features
- 3A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.070Ω
- Diode Exhibits Both High Speed and Soft Recovery
- Temperature pensating PSPICE™ Model
- Thermal Impedance SPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”