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HUF75309T3ST Datasheet N-channel MOSFET

Manufacturer: Intersil (now Renesas)

Overview: HUF75309T3ST Data Sheet June 1999 File Number 4377.3 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75309.

Key Features

  • 3A, 55V.
  • Ultra Low On-Resistance, rDS(ON) = 0.070Ω.
  • Diode Exhibits Both High Speed and Soft Recovery.
  • Temperature Compensating PSPICE™ Model.
  • Thermal Impedance SPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75309T3ST.

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HUF75309T3ST Distributor