HUF75307T3ST Overview
Data Sheet HUF75307T3ST October 1999 File Number 4364.4 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode...
HUF75307T3ST Key Features
- 2.6A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.090Ω
- Diode Exhibits Both High S
