HUF75329G3 Datasheet - Fairchild Semiconductor

HUF75329G3 N-Channel MOSFET

HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for.

HUF75329G3 Features

* 49A, 55V

* Ultra Low On-Resistance, rDS(ON) = 0.024Ω

* Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www.fairchildsemi.com

* Thermal Impedance PSPICE and SABER Models

* Peak Current vs Pulse Width Curve

* UIS Rating Cu

HUF75329G3 Datasheet (252.92 KB)