Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HUF75329D3 HUF75329D3S.
Full PDF Text Transcription for HUF75329D3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HUF75329D3. For precise diagrams, and layout, please refer to the original PDF.
HUF75329D3, HUF75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using...
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FET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
HUF75329D3 Datasheet
