HUF75329D3 Description
HUF75329D3, HUF75329D3S Data Sheet December 2001 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits...
HUF75329D3 Key Features
- 20A, 55V
- Simulation Models
- Temperature pensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: .fairchildsemi
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”