HUF75329D3S Overview
Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse...
HUF75329D3S Key Features
- 20A, 55V
- Simulation Models
- Temperature pensated PSPICE® and SABER™ Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: .fairchildsemi
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
