* -19A, -100V
* rDS(ON) = 0.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines fo
IRF9140
Intersil Corporation
59.32 KB
P-channel power mosfet.
IRF9140 Data Sheet February 1999 File Number 2278.3 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate .
📁 Related Datasheet
IRF9140 P-Channel Power MOSFET (Seme LAB)
IRF9140 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
IRF9140 Repetitive Avalanche and dv/dt Rated Power MOSFET (International Rectifier)
IRF9141 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
IRF9141 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)
IRF9142 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
IRF9142 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)
IRF9143 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)
IRF9143 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
IRF9130 P-Channel Power MOSFET (Samsung semiconductor)
