IRF9140 Datasheet - Intersil Corporation

IRF9140 P-Channel Power MOSFET

IRF9140 Data Sheet February 1999 File Number 2278.3 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bi.

IRF9140 Features

* -19A, -100V

* rDS(ON) = 0.200Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines fo

IRF9140 Datasheet (59.32 KB)

IRF9140 Datasheet Preview — Preview of IRF9140 PDF

Datasheet Details

Part number:

IRF9140

Manufacturer:

Intersil Corporation

File Size:

59.32 KB

Description:

P-channel power mosfet.

📁 Related Datasheet

IRF9140 P-Channel Power MOSFET (Seme LAB)

IRF9140 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

IRF9140 Repetitive Avalanche and dv/dt Rated Power MOSFET (International Rectifier)

IRF9141 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

IRF9141 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)

IRF9142 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

IRF9142 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)

IRF9143 (IRF9140 - IRF9143) P-Channel 100V Power MOSFETs (International Rectifier)

TAGS

IRF9140 P-Channel Power MOSFET Intersil Corporation

IRF9140 Distributor