IRF9150 Datasheet (Intersil Corporation)

IRF9150, P-Channel Power MOSFET

IRF9150 Data Sheet February 1999 File Number 2280.3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switc

IRF9150 Features

* -25A, -100V

* rDS(ON) = 0.150Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRF9150