Part number:
IRF9130
Manufacturer:
Samsung semiconductor
File Size:
508.31kb
Download:
Description:
P-channel power mosfet.
PDF File Details
IRF9130
Samsung semiconductor
508.31kb
P-channel power mosfet.
📁 Related Datasheet
IRF9130 - P-Channel Power MOSFET
(Seme LAB)
IRF9130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
.
IRF9130 - P-Channel Power MOSFET
(Intersil Corporation)
IRF9130
Data Sheet February 1999 File Number
2220.3
-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate p.
IRF9130 - P-Channel Power MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -.
IRF9130SMD - P-Channel Power MOSFET
(Seme LAB)
IRF9130SMD
MECHANICAL DATA Dimensions in mm (inches)
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1.
IRF9131 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9132 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9133 - P-Channel Power MOSFET
(Samsung semiconductor)
.
IRF9140 - P-Channel Power MOSFET
(Seme LAB)
IRF9140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
.
IRF9140 - P-Channel Power MOSFET
(Intersil Corporation)
IRF9140
Data Sheet February 1999 File Number
2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate .
IRF9140 - (IRF9140 - IRF9143) P-Channel Power MOSFETs
(Samsung Electronics)
..
..
..
..
..
..
..
.
Stock and price
TAGS
