Datasheet Details
Part number:
IRF9510
Manufacturer:
Intersil Corporation
File Size:
59.48 KB
Description:
P-Channel Power MOSFET
Features
* 3.0A, 100V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance [ /Title (IRF95 10) /Subject (3.0A, 100V, 1.200 Ohm
IRF9510_IntersilCorporation.pdf
IRF9510, P-Channel Power MOSFET
IRF9510 Data Sheet July 1999 File Number 2214.4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching t
IRF9510 Distributor
📁 Related Datasheet
📌 All Tags
