* 3.0A, 100V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance [ /Title (IRF95 10) /Subject (3.0A, 100V, 1.200 Ohm
IRF9510
Intersil Corporation
59.48 KB
P-channel power mosfet.
IRF9510
Data Sheet July 1999 File Number
2214.4
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field.
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