IRF9530 Datasheet, mosfet equivalent, Intersil Corporation

IRF9530 Features

• Mosfet
• 12A, 100V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• L

PDF File Details

Part number:

IRF9530

Manufacturer:

Intersil Corporation

File Size:

63.60kb

Download:

📄 Datasheet

Description:

P-channel power mosfet.

IRF9530 Application

• Applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transist

TAGS

IRF9530

Intersil Corporation

📁 Related Datasheet

IRF9530 - Power MOSFET (International Rectifier)
.

IRF9530 - P-Channel Power MOSFETs (Fairchild Semiconductor)
Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power fie.

IRF9530 - Power MOSFET (Vishay)
.vishay. IRF9530 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.

IRF9530 - P-Channel MOSFET (INCHANGE)
isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Res.

IRF9530-220M - P-Channel Power MOSFET (Seme LAB)
IRF9530-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 P–CHANNEL POWER MOSFET FOR HI–REL APPLICATION.

IRF9530N - Power MOSFET (International Rectifier)
PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-.

IRF9530N - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tes.

IRF9530NL - Power MOSFET (International Rectifier)
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.

IRF9530NL - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.

IRF9530NLPbF - Power MOSFET (Infineon)
.