IRF9520 Datasheet - Intersil Corporation

IRF9520 P-Channel Power MOSFET

IRF9520 Data Sheet July 1999 File Number 2281.3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high.

IRF9520 Features

* 6A, 100V

* rDS(ON) = 0.600Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRF9520 PA

IRF9520 Datasheet (57.96 KB)

IRF9520 Datasheet Preview — Preview of IRF9520 PDF

Datasheet Details

Part number:

IRF9520

Manufacturer:

Intersil Corporation

File Size:

57.96 KB

Description:

P-channel power mosfet.

📁 Related Datasheet

IRF9520 Power MOSFET (Vishay)

IRF9520N Power MOSFET (International Rectifier)

IRF9520NL Power MOSFET (International Rectifier)

IRF9520NPBF HEXFET POWER MOSFET (International Rectifier)

IRF9520NS Power MOSFET (International Rectifier)

IRF9520NSPBF HEXFET Power MOSFET (International Rectifier)

IRF9520S Power MOSFET (Vishay)

IRF9521 P-Channel Enhancement-Mode Vertical DMOS Power FET (Supertex Inc)

TAGS

IRF9520 P-Channel Power MOSFET Intersil Corporation

IRF9520 Distributor