IRF9530NL Datasheet, mosfet equivalent, International Rectifier

IRF9530NL Features

• Mosfet ator Same Type as D.U.T. 50KΩ QG 12V .2µF -10V QGS VG QGD VGS .3µF D.U.T. +VDS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. G

PDF File Details

Part number:

IRF9530NL

Manufacturer:

International Rectifier

File Size:

173.15kb

Download:

📄 Datasheet

Description:

Power mosfet. l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi

IRF9530NL Application

• Applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability an

TAGS

IRF9530NL

International Rectifier

📁 Related Datasheet

IRF9530N - Power MOSFET (International Rectifier)
PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-.

IRF9530N - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tes.

IRF9530NL - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.

IRF9530NLPbF - Power MOSFET (Infineon)
.

IRF9530NLPBF - Power MOSFET (International Rectifier)
.. PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free .irf. 1 04/26/05 IRF9530NS/LPbF 2 .irf. IRF9530NS/LPbF ..

IRF9530NPBF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free De.

IRF9530NPBF - P-Channel MOSFET (VBsemi)
IRF9530NPBF .VBsemi. IRF9530NPBF Datasheet P-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Config.

IRF9530NS - Power MOSFET (International Rectifier)
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.

IRF9530NS - P-Channel MOSFET (VBsemi)
IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.22 at VGS = - 10.

IRF9530NS - P-Channel MOSFET (INCHANGE)
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog.