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IRF9530NSTRR

Power MOSFET

IRF9530NSTRR Features

* 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M

IRF9530NSTRR General Description

l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po.

IRF9530NSTRR Datasheet (173.15 KB)

Preview of IRF9530NSTRR PDF

Datasheet Details

Part number:

IRF9530NSTRR

Manufacturer:

International Rectifier

File Size:

173.15 KB

Description:

Power mosfet.
PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope.

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IRF9530NSTRR Power MOSFET International Rectifier

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