IRF9530NL - P-Channel MOSFET
IRF9530NL Features
* Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Fast switching application.
* ABSOLUTE MA
