IRF9540NS - P-Channel MOSFET
IRF9540NS Features
* Static drain-source on-resistance: RDS(on)≤117mΩ(@VGS= -10V; ID= -11A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Fast switching application.
* ABSOLUTE MAX
