IRF9530 Datasheet - INCHANGE

IRF9530, P-Channel MOSFET

isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530

Features

* -12A，-100V
* Single pulse avalanche energy rated
* Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max)
* SOA is power dissipation limited
* Nanosecond switching speeds
* Linear transfer characteristics
* Minimum Lot-to-Lot variations for robust device performance and reliabl

Applications

* such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS

IRF9530-INCHANGE.pdf